IQE has over 20 years of experience in the epitaxial growth of group IV materials (Si, Ge, SiGe) and offers blanket and selective area epitaxial services on wafer diameters up to 200mm for advanced silicon-based technologies, including for power, photonics and CMOS applications.
Most recently, IQE has developed SiGeSn, GeSn and porous silicon technologies that can be scaled for volume manufacture for photonics and RF applications.
Data for GeSn Epitaxy
