In addition to standard substrates, we are able provide a range of custom specification and materials forms across all of our III-V materials portfolio, satisfying customer requirements at the forefront of R&D . These options enable device designers and process engineers to push the boundaries of epitaxy, device performance and well as develop new solutions for product manufacture.
High-accuracy orientations & cleaved flats
Surface orientation can be specified with accuracies down to ±0.02° using triple-axis X-ray diffractometry. Substrates may also be supplied with very precise misorientations in any direction from the growth plane. Cleaved flats are available to support niche device architectures.
Novel indices
High-index orientations such as (x,1,1), where x = 1–6, and orientations including (110), are available across most materials. These indices support specialised epitaxy requirements and emerging device concepts.
Process trial wafers
Low-cost, non-epi-ready wafers designed for sacrificial use in multi-wafer epitaxy reactors, process monitoring, etching experiments and equipment set-up. These wafers allow users to optimise processes without consuming premium production substrates.
Ultra-thin wafers
Extremely thin GaAs (2" and 3") or InP wafers, as thin as 150 µm, are available for laser facet coating and spacer applications. These wafers are not finished to full epi-ready standards but provide unique solutions where ultra-thin form factors are critical.
Optical blanks
Circular blanks produced in a variety of diameters and thicknesses, suitable for further processing into optical lenses and other photonic components.