We supply a wide range of high-purity source materials for epitaxial growth, supporting both Liquid Phase Epitaxy (LPE) and Molecular Beam Epitaxy (MBE) applications. All materials are manufactured to stringent purity standards, with full characterisation and certification to ensure reliable performance in production and R&D environments.
Indium Phosphide (InP) Polycrystalline
Our undoped, high-purity InP is refined and synthesised in a horizontal high-pressure (HHP) furnace. It is supplied as full ingots, ingot sections, wafer slices or crushed granules, depending on application requirements. This material offers a reliable feedstock for LPE and MBE processes.
Other polycrystalline materials
Produced by reacting ultra-high-purity (6N) elements into stoichiometric compounds, then shaped, cleaned and individually packaged. Each ingot is assessed by Hall/Van der Pauw measurements to confirm electrical properties, and every batch is supplied with a Certificate of Conformance. Purity is verified using Glow Discharge Mass Spectroscopy (GDMS) on a sampling basis.
For Liquid Phase Epitaxy (LPE)
Supplied as as-cut or lightly etched wafers, as well as crushed granules. Mechanical and electrical specifications match those of standard polycrystalline or single-crystal products, ensuring smooth integration into existing processes.
For Molecular Beam Epitaxy (MBE)
We provide polycrystalline gallium phosphide granules (5N purity) alongside a broad set of high-purity elemental sources sourced from trusted manufacturers worldwide. Custom-made ingots are available on request.
- Gallium: 7N ingots (various forms)
- Antimony: 7N broken lumps
- Aluminium: 6N pieces
- Indium: 7N ingots (various forms)