GaN is a versatile wide-bandgap semiconductor material that has redefined performance benchmarks in the RF, power, photonics and display markets. IQE is the GaN pioneer, having produced some of the first commercial HEMT epiwafers more than 20 years ago.  IQE has steadily progressed and scaled GaN across multiple substrate platforms (SiC, Si, GaN, sapphire and engineered substrates). Today, our GaN products can be found in advanced radar systems and 5G networks. Our future products will enable advanced power electronics in electric vehicles and data centres, microLED communications and display applications.

Applications

Connect

5G base station power amplifiers

Ultra-fast, low-latency optical interconnects in data centres

Power

Electric vehicle and data centre power management

Sense

Radar, electronic warfare and secure communications

Display

Augmented and virtual reality and automotive head-up displays

Wafer structures offered

  • GaN RF HEMTs on SiC and Si
  • 650 V D-mode and E-mode GaN HEMTs
  • GaN-on-Sapphire for higher voltage power electronics
  • Blue and Green GaN-on-Si microLEDs
  • Red GaN on Si In-via microLEDs

Leading in GaN epitaxy

  • Market leadership for RF, power and display applications
  • Pioneering heritage underpinned by more than 20 years of GaN innovation
  • Versatile portfolio that covers all relevant substrate types
  • Proven scale that leverages IQE’s heritage for high-volume manufacturing
  • Innovation pipeline and R&D roadmap to support customer and market demands
  • Flexible business model allows the creation of bespoke, win-win customer partnerships