GaAs epitaxy has been central to IQE’s leadership in compound semiconductors since 1988. From powering the first generation of mobile phones to enabling today’s 3D Sensing and red microLEDs, GaAs remains one of the most versatile semiconductor platforms. Our broad portfolio includes material solutions for RF front-end modules, 3D facial recognition systems, optical communication systems and ultra-high resolution displays, all scalable to 200 mm including on Germanium substrates.

Applications

Connect

Mobile, Wi-Fi and wireless infrastructure

VCSELs, laser diodes and photo detectors for optical communications

Sense

Multi-junction VCSELs for 3D Sensing

Display

Augmented and virtual reality and automotive head-up displays

Wafer structures offered

  • GaAs pHEMTs, MESFETs, HFETs
  • GaAs PIN & Schottky diodes
  • InGaP/GaAs HBTs, BiFETs, BiHEMTs
  • AlGaAs/GaAs HBTs, BiFETs, BiHEMTs
  • VCSELs: 850 nm, 940 nm, 1060 nm
  • Quantum-well photo detectors (QWIP)
  • AlGaInP/GaAs red LD/LED
  • GaAs-on-Ge integration platforms

Leading in GaAs epitaxy

  • Decades of leadership; IQE has played a key role in advancing GaAs epitaxy and continues to drive wireless, sensing and display innovation
  • Breadth of portfolio ranging from HBTs, pHEMTs and diodes to VCSELs and red LD/LEDs; IQE offers the most comprehensive GaAs epiwafer range
  • Proven scalable manufacturing across electronic and photonic applications that underpin key consumer markets
  • CMOS expertise for providing unique solutions with seamless silicon integration